Why Are People Optimistic About GaN Gallium Nitride Application in 5G

(Why Are People Optimistic About GaN Gallium Nitride Application in 5G )

GaN is a semiconductor material of third generation with a wide forbidden-band width. It has superior properties compared to first-generation Si or second-generation GaAs.

GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degC. This allows them to carry a higher energy density, and improve reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the GaN device. This is good for improving the overall energy efficiency.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the “tonality” that is characteristic of the semiconductor industry.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics compared to other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and utilizing carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher energy density. GaN’s small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, making it easier to design higher bandwidth systems. Power Amplifiers (PA) are a critical component of the RF Circuit.

Currently, power amplifiers consist mainly of a galium arsenide amplifier and a complementary metallic oxide semiconductor amplifier (CMOSPA), where GaAs PA has been the mainstay. However, with 5G coming, GaAs devices will no longer be able to achieve high integration at these high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means a higher operating temperature.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of the holiday season. 5G is said to be 100 to 1000 times faster than the current 4G network, and will reach Gigabit per seconds.

As well as the increase in base station density and number, there will be a large increase in RF devices. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

( Tech Co., Ltd. ) is an experienced manufacturer of Gallium Nitride with over 12 year experience in research and product development. You can contact us to send an inquiry if you want high quality Gallium Nitride.

(Why Are People Optimistic About GaN Gallium Nitride Application in 5G )