Gallium Nitride powder GaN cas 25617-97-4

(Gallium Nitride powder GaN cas 25617-97-4)

Feature of Gallium Nitride powder

GaN materials research and application of the current global semiconductor research front and hot, is the development of microelectronic devices, optoelectronic devices of new semiconductor materials.
It has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (almost no acid corrosion) and other properties and strong anti-radiation ability in optoelectronics, high temperature and high power devices and high Frequency microwave device applications has a broad prospect.

Item 

Particle size

purity

formula weight

melting point

density

Tr-GaN 

325mesh

3N

83.7297

1700℃

6.1g/mL,25/4℃

(Gallium Nitride powder GaN cas 25617-97-4)