Copper Indium Gallium Selenide (CuInGaSe (1:1:1:2))-Powder

(Copper Indium Gallium Selenide (CuInGaSe (1:1:1:2))-Powder)

Molecular Formula: CuInGaSe(1:1:1:2) Purity: 99.999% Products Code: TR Specification Model: – 325 mesh (40 mic aps)

Characteristic

Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated “CIS”) and copper gallium selenide.

Chemical formula：CuIn(1-x)GaxSe2

Density：~5.7 g/cm3

Melting point：1,070 to 990 °C (1,960 to 1,810 °F; 1,340 to 1,260 K) (x=0–1)

Band gap：1.0–1.7 eV (x=0–1)

Crystal structure：tetragonal

Application

It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry. In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.

(Copper Indium Gallium Selenide (CuInGaSe (1:1:1:2))-Powder)