Overview of Silicon Carbide Porous Ceramic Plate for Semiconductor

Silicon Carbide (SiC) ceramic is an advanced engineering material synthesized through the high-temperature reaction of silica sand and carbon. Known for its exceptional hardness and stability, this technical ceramic combines the lightweight properties of ceramics with the thermal performance of metals. Silicon Carbide ceramics exist in various forms, including sintered SiC, reaction-bonded SiC (RBSC), and recrystallized SiC, each offering unique microstructures that deliver outstanding performance in the most demanding industrial environments. With its covalent bond structure, SiC provides remarkable durability that surpasses conventional ceramics and metals in extreme conditions.

Features of Silicon Carbide Porous Ceramic Plate for Semiconductor

Exceptional Hardness: Ranks 9.5 on the Mohs scale, second only to diamond, providing superior wear and abrasion resistance

High-Temperature Stability: Maintains mechanical strength up to 1400°C (2550°F) in inert atmospheres and 1600°C in oxidizing environments

Thermal Shock Resistance: Excellent thermal conductivity (120-170 W/m·K) combined with low thermal expansion ensures resistance to rapid temperature changes

Chemical Inertness: Unaffected by most acids, alkalis, and corrosive substances; only attacked by strong oxidizing agents at high temperatures

Outstanding Thermal Conductivity: Four times higher than stainless steel, enabling efficient heat transfer applications

Lightweight Structure: Approximately one-third the density of steel while maintaining superior strength-to-weight ratio

Specification of Silicon Carbide Porous Ceramic Plate for Semiconductor

Spec of Silicon Carbide Porous Ceramic Plate for Semiconductor

Product and Framework

The plate is made from high-purity silicon carbide (SiC). It has a consistent porous framework. This framework allows consistent gas or fluid circulation throughout the surface area. Pore dimension arrays from 0.1 to 10 micrometers. The precise size depends upon the application needs. Overall porosity is generally between 30% and 50%. This balance ensures stamina while maintaining leaks in the structure.

Secret Properties

Thermal stability: Home plate works well at temperature levels approximately 1,400 ° C in inert ambiences. It resists thermal shock far better than a lot of porcelains.
Chemical resistance: It withstands solid acids, bases, and aggressive etching gases made use of in semiconductor manufacturing.
Mechanical toughness: Despite having open pores, home plate keeps high flexural toughness– usually over 200 MPa.
Purity: Metal pollutants are maintained below 10 ppm. This protects against contamination during wafer processing.

Measurements and Tolerances

Requirement sizes consist of 150 mm, 200 mm, and 300 mm to match typical wafer sizes. Density ranges from 2 mm to 10 mm. Flatness tolerance is ± 0.05 mm throughout the entire surface. Surface roughness is Ra ≤ 0.2 µm after great sprucing up. Custom-made sizes are offered upon request.

Applications

This porous ceramic plate is made use of as an assistance or diffusion plate in chemical vapor deposition (CVD), plasma etching, and wafer cleaning systems. Its steady efficiency under rough conditions aids maintain procedure uniformity and yield in semiconductor fabs. The product’s inert nature makes sure no undesirable responses with process chemicals. Gas distribution via the plate stays even over lengthy production runs.

Applications of Silicon Carbide Porous Ceramic Plate for Semiconductor

Applications of Silicon Carbide Porous Porcelain Plate in Semiconductor Manufacturing

Exact Purification for Ultrapure Chemicals

Silicon carbide porous ceramic plates are extensively utilized to filter aggressive chemicals in semiconductor manufacturing. These plates take care of acids, bases, and solvents without deteriorating. Their inflexible structure maintains pore dimension secure, also under high pressure or temperature level. This makes sure consistent removal of tiny bits that might spoil delicate wafers.

Trusted Support in Wafer Handling

Throughout etching or cleaning up steps, wafers need steady, inert platforms. Silicon carbide plates offer outstanding mechanical toughness and thermal security. They withstand bending and do not release contaminants. This makes them ideal for holding wafers during crucial fabrication phases where purity matters most.

Reliable Gas Circulation

In chemical vapor deposition (CVD) and various other thin-film processes, uniform gas circulation is important. The controlled porosity of these ceramic plates permits gases to spread equally throughout the wafer surface. This assists produce constant movie thickness and enhances yield. The product additionally endures duplicated thermal cycling without cracking.

Durable Efficiency in Harsh Atmospheres

Semiconductor devices often run in corrosive, high-temperature setups. Standard metals or polymers fall short quickly under such problems. Silicon carbide, nevertheless, keeps its stability over time. Its solidity and chemical resistance minimize upkeep needs and downtime. Manufacturing facilities gain from longer component life and less process disturbances.

Tidiness Meets Accuracy

Contamination control is non-negotiable in chip production. Silicon carbide permeable plates are produced to fulfill rigorous sanitation requirements. They do not lose particles or soak up dampness. Their smooth surface areas stop deposit accumulation, supporting repeatable, high-grade results batch after batch.

Company Introduction

Welcome to Eduloc, a leading global supplier of high-quality ceramic grinding balls. Our product range includes,Mullite Ceramic, Quartz Ceramic, Aluminum Nitride Ceramic, Silicon Nitride Ceramic, Silicon Carbide Ceramic designed for industries such as mining, chemicals, coatings, electronics, and pharmaceuticals. We are committed to providing durable and efficient grinding solutions tailored to our customers’ diverse needs. With advanced manufacturing technology and stringent quality control, our ceramic grinding balls excel in wear resistance, corrosion resistance, and thermal stability. Partner with us for reliable products and exceptional service that enhance your production efficiency and reliability.

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5 FAQs of Silicon Carbide Porous Ceramic Plate for Semiconductor

Frequently Asked Questions: Silicon Carbide Porous Ceramic Plate for Semiconductor Applications

What is a silicon carbide porous ceramic plate?

It is a high-performance ceramic part made from silicon carbide with tiny interconnected pores. These plates are strong, heat-resistant, and chemically stable. They are built to handle the tough conditions inside semiconductor manufacturing tools.

Why use silicon carbide instead of other materials?

Silicon carbide resists high temperatures better than most metals or standard ceramics. It also does not react easily with aggressive chemicals used in chip production. This means longer life, fewer replacements, and cleaner processes compared to alternatives like alumina or quartz.

How does porosity help in semiconductor processing?

The controlled pores let gases or vacuum flow evenly across the wafer surface. This improves temperature uniformity and process consistency during etching, deposition, or annealing steps. Uniform gas distribution leads to higher yield and better device performance.

Can these plates handle thermal shock?

Yes. Silicon carbide has excellent thermal conductivity and low thermal expansion. It can go from cold to very hot quickly without cracking. This makes it ideal for rapid thermal processing (RTP) and other fast-cycling applications in fabs.

Are custom sizes and pore structures available?

Most suppliers offer tailored dimensions, thicknesses, and pore sizes based on your tool design and process needs. You can specify open porosity levels from 20% to 50% and average pore diameters ranging from a few microns to over 100 microns. Work with your manufacturer early to match the plate to your exact requirements.