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About indium arsenide

Indium arsenide is a semiconductor composed of indium and arsenic. It appearance grey solid crystals with a melting point of 942 °C.

Indium arsenide is a semiconductor material fabricated from arsenic and metallic element. The semiconductor includes a melting point of 942 °C and seems within the variety of grey crystals with a solid structure. It's terribly just like metallic element compound and may be a material having an immediate bandgap. metallic element compound is fashionable for its slim energy bandgap and high negatron quality.

Indium arsenide (InAs) CQDs with NIR absorption have emerged as promising n-type materials for superior electronic and optoelectronic devices. InAs has been shown to possess inherent n-type conduction originating from electron-donating surface states12. moreover, the InAs may be a additonal engaging selection, due to less toxicity and chemical stability, compared to steer sulphide(PbS) and lead selenide (PbSe). as a result of the InAs exhibits a high valency bonding nature (above 30%) and a high formation energy13, just like metallic element compound(GaAs), the crystal can not be simply unrelated into In (III) and As (III) (arsenide ions). On the opposite hand, metal S dissolves in water to get Pb and S ions with a KSP of 10−28