Now China has become a powerful country in science and technology, but do you know how powerful China's technology is? The manned space station alone is not enough, and now it has successfully broken through the key technology of nuclear fusion, even leading the world by 15 years. Does this mean that China is not far from the artificial sun? It turned out that the fully superconducting tokamak nuclear fusion experimental device developed by China at the Hefei Research Institute of the Chinese Academy of Sciences successfully achieved a record of 101 seconds of continuous operation at 120 million degrees Celsius, and broke the world record. Compared with the previous record in South Korea, China has time has been directly extended by 5 times, and it seems that we are one step closer to the practical stage of artificial sun.
The success of nuclear fusion technology will lead to the development of silicon carbide powder.
The main difference between silicon carbide and boron carbide is that in silicon carbide one silicon atom bonds to one carbon atom, whereas in boron carbide four boron atoms bond to one carbon atom.
Silicon carbide and boron carbide are carbon compounds. Both of these are very hard materials. They have different chemical and physical properties.
What is Silicon Carbide?
Silicon carbide is a semiconductor material made up of silicon and carbon atoms. The chemical formula of the compound is SiC. So, it has a silicon atom bonded to a carbon atom by a covalent bond. The material, also known as emery, is found in nature in the form of mossanite, an extremely rare mineral. Therefore, silicon carbide is mostly made as a synthetic material.
The molar mass of silicon carbide is 40g/mol. The material has a blue-black iridescence crystal structure, but is colorless in its pure form. The black color is due to the presence of iron as an impurity. Moreover, it is insoluble in water, but soluble in molten iron and lye. However, we can find about 250 crystal types of silicon carbide. This compound shows polymorphism. Here, alpha silicon carbide is the most common and stable form. It forms at very high temperatures and has a hexagonal crystal structure.
Silicon carbide has many uses. Mainly used for abrasive and cutting tool production. It is also an important structural material. Such as composite armor, ceramic coating bulletproof vests, high-temperature kilns, etc. In addition, silicon carbide is used to make car parts and as a semiconductor material.
What is Boron Carbide?
Boron carbide is an extremely hard material made of boron and carbon atoms. The chemical formula of this compound is B4C. So, it has four boron atoms bonded to one carbon atom. It is second only to diamond and cubic boron nitride in hardness. Therefore, it is also known as the "black diamond".
The molar mass of boron carbide is 55.25g/mol. It appears as a dark gray or black powder or crystal. It is insoluble in water. This material is known for its high hardness, high neutron absorption cross-section, and high stability to ionizing radiation. In addition, it has semiconductor properties. Therefore, the electronic properties of boron carbide are mainly hopping transport. In general, it is a P-type semiconductor.
Boron carbide is a synthetic material. It can be prepared by reducing boron trioxide to boron carbide in the presence of carbon. The reaction requires carbon or magnesium as a reducing agent.
What is the Difference Between Silicon Carbide and Boron Carbide?
The main difference between silicon carbide and boron carbide is that in silicon carbide one silicon atom bonds to one carbon atom, whereas in boron carbide four boron atoms bond to one carbon atom. Silicon carbide is a blue-black crystal, while boron carbide is a dark gray or black crystal.
The following infographic summarizes the differences between silicon carbide and boron carbide.
SiC and B4C Price
The price is influenced by many factors including the supply and demand in the market, industry trends, economic activity, market sentiment, and unexpected events.
SiC and B4C Supplier
RBOSCHCO is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and nanomaterials. The company export to many countries including the USA, Canada, Europe, UAE, South Africa, Tanzania, Kenya, Egypt, Nigeria, Cameroon, Uganda, Turkey, Mexico, Azerbaijan, Belgium, Cyprus, Czech Republic, Brazil, Chile, Dubai, Japan, Korea, Vietnam, Thailand, Malaysia, Indonesia, Australia, Germany, France, Italy, Portugal, etc.
As a leading nanotechnology development manufacturer, RBOSCHCO dominates the market. Our professional work team provides perfect solutions to help improve the efficiency of various industries, create value, and easily cope with various challenges.
If you are looking for SiC and B4C, please send an email. (firstname.lastname@example.org)
Due to the limited total amount of traditional energy, people have a huge demand for cleaner and greener new energy alternatives. Now, the emergence of graphene is unlocking the possibility of its application in the energy field, which can create a greener, more efficient, and sustainable future. Here Francesco Bonaccorso, Deputy Director of Innovation at the Graphene Flagship Program, explains how his researchers have developed a series of initiatives to bring graphene from the lab to the commercial market. Graphene has become a research hotspot for new materials in the 21st century. Graphene has been adopted by many industries, the most notable of which are healthcare and key material applications.
The development of graphene has brought huge fluctuations in the demand for silicon carbide powder, and the demand for silicon carbide powder will continue to grow in the future. You can contact us for the latest news on silicon carbide powder.
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