News List

News

Products

Elementary

Boride powder

Fluoride

Alloy powder

Laurate series

Oleate series

Acetylacetone salt series

Rear Earth Carbonate

Rear Earth Sulfate

Oxide powder

Sulfide powder

Hydride powder

Carbide powder

Silicide powder

Nitride powder

Selenide powder

Telluride

Magnetic Material

Environmental material

Company News

Home > News >

About indium arsenide

2019-02-14
Indium arsenide is a semiconductor composed of indium and arsenic. It appearance grey solid crystals with a melting point of 942 °C.

Indium arsenide is a semiconductor material fabricated from arsenic and metallic element. The semiconductor includes a melting point of 942 °C and seems within the variety of grey crystals with a solid structure. It's terribly just like metallic element compound and may be a material having an immediate bandgap. metallic element compound is fashionable for its slim energy bandgap and high negatron quality.

Indium arsenide (InAs) CQDs with NIR absorption have emerged as promising n-type materials for superior electronic and optoelectronic devices. InAs has been shown to possess inherent n-type conduction originating from electron-donating surface states12. moreover, the InAs may be a additonal engaging selection, due to less toxicity and chemical stability, compared to steer sulphide(PbS) and lead selenide (PbSe). as a result of the InAs exhibits a high valency bonding nature (above 30%) and a high formation energy13, just like metallic element compound(GaAs), the crystal can not be simply unrelated into In (III) and As (III) (arsenide ions). On the opposite hand, metal S dissolves in water to get Pb and S ions with a KSP of 10−28